Dr Saptarsi Ghosh

Darlithydd mewn Peirianneg Electronig a Thrydanol, Electronic and Electrical Engineering

saptarsi.ghosh@abertawe.ac.uk

324
Trydydd Llawr
Adeilad Gogleddol Peirianneg
Campws y Bae

Ar gael ar gyfer Goruchwyliaeth Ôl-raddedig

Dolenni Ymchwil

https://orcid.org/0000-0003-1685-6228

Google Scholar

Trosolwg

Mae Dr Saptarsi Ghosh yn ddarlithydd yn yr adran Peirianneg Electronig a Thrydanol, ac ymunodd â Phrifysgol Abertawe ar ddechrau 2024. Cyn y swydd ddarlithio hon, roedd yn ymchwilydd ôl-ddoethurol ym Mhrifysgol Caergrawnt a chwblhaodd ei PhD gyda Sefydliad Technoleg India (IIT) Kharagpur.

Mae ei ymchwil bresennol yn ymgyffwrdd â meysydd peirianneg drydanol a ffiseg gymhwysol a chanddi ddau amcan technolegol - i) gwella effeithlonrwydd ynni electroneg pŵer fodern yn sylweddol a ii) gwireddu dyfeisiau ar gyfer cymwysiadau cwantwm 2.0 trawsnewidiol. Er mwyn cyflawni'r rhain, ceir ffocws penodol ar ddyfeisiau dimensiynol isel y teulu galiwm nitrad (GaN) a galiwm ocsid (Ga2O3) o led-ddargludyddion bwlch band llydan. Gydag offer o'r radd flaenaf mewn twf epitacsiol, nodweddu deunyddiau a thrydanol, a lithograffeg, nod ei grŵp yw optimeiddio eu twf ar raddfa fawr, deall rôl pethau nad ydynt yn ddelfrydol (megis diffygion) ar berfformiad dyfeisiau macrosgopig, a chymhwyso egwyddorion ffiseg i beirianneg dyfeisiau.

Mae'n gweithio'n bennaf yn y Ganolfan Deunyddiau Lled-ddargludyddion Integreiddiol (CISM) ar Gampws y Bae, ac mae ei ymchwil yn elwa'n gryf o alluoedd arbrofol y ganolfan hon y buddsoddwyd £50m ynddi, sydd wedi bod ar waith ers 2023. Yn ogystal â'r cysylltiadau cryf yng nghlwstwr lled-ddargludyddion lleol de Cymru, mae ganddo gydweithwyr academaidd gweithredol ledled y DU ac India.

Mae Dr Ghosh wedi bod yn aelod o gymdeithas fyd-eang Sefydliad y Peirianwyr Trydanol ac Electroneg (IEEE) ers 2014 ac ar hyn o bryd mae'n adolygydd cymheiriaid i nifer o gylchgronau lefel uchaf.

Meysydd Arbenigedd

Electroneg bwlch band eang (nitradau ac ocsidau)
Dylunio heterostrwythurau ar gyfer dyfeisiau RF a phŵer
Dibynadwyedd transistorau
Twf lled-ddargludyddion cyfansawdd (MOCVD ac MBE)
Y berthynas rhwng strwythurau a nodweddion ar raddfa nano
Cludiant cwantwm

Uchafbwyntiau Gyrfa

Diddordebau Addysgu

Dyfeisiau electronig cyflwr solet

Cylchedau microelectronig

Nodweddu dyfeisiau a deunyddiau lled-ddargludyddion

Electromagneteg

Cyhoeddiadau

Uchafbwyntiau Ymchwil

Cannon, J., Bishop, S., Eggleton, K., Yağcı, H., Clark, R., Ibrahim, S., Hadden, J., Ghosh, S., Kappers, M., Oliver, R., & Bennett, A. (2024). Room temperature quantum emitters in aluminum nitride epilayers on silicon. Applied Physics Letters, 124(24)
https://doi.org/10.1063/5.0207744, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66863
http://dx.doi.org/10.1063/5.0207744
Chen, C., Ghosh, S., Wolf, P., Liang, Z., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2024). Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy. Applied Physics Letters, 124(23)
https://doi.org/10.1063/5.0203646, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66864
http://dx.doi.org/10.1063/5.0203646
Sarkar, M., Adams, F., Dar, S., Penn, J., Ji, Y., Gundimeda, A., Zhu, T., Liu, C., Hirshy, H., Massabuau, F., O’Hanlon, T., Kappers, M., Ghosh, S., Kusch, G., & Oliver, R. (2024). Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons. Microscopy and Microanalysis, 30(2), 208-225.
https://doi.org/10.1093/mam/ozae028, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66865
Hinz, A., Ghosh, S., Fairclough, S., Griffiths, J., Kappers, M., Oliver, R., & Wallis, D. (2023). Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures. Journal of Crystal Growth, 624, 127420
https://doi.org/10.1016/j.jcrysgro.2023.127420, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66877
http://dx.doi.org/10.1016/j.jcrysgro.2023.127420
Chen, C., Ghosh, S., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2023). Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. Ultramicroscopy, 254, 113833
https://doi.org/10.1016/j.ultramic.2023.113833, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66866
http://dx.doi.org/10.1016/j.ultramic.2023.113833
Cheng, X., Wessling, N., Ghosh, S., Kirkpatrick, A., Kappers, M., Lekhai, Y., Morley, G., Oliver, R., Smith, J., Dawson, M., Salter, P., & Strain, M. (2023). Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers. ACS Photonics, 10(9), 3374-3383.
https://doi.org/10.1021/acsphotonics.3c00854, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66868
http://dx.doi.org/10.1021/acsphotonics.3c00854
Loeto, K., Kusch, G., Ghosh, S., Kappers, M., & Oliver, R. (2023). Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence. Micron, 172, 103489
https://doi.org/10.1016/j.micron.2023.103489, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66867
http://dx.doi.org/10.1016/j.micron.2023.103489
Loeto, K., Kusch, G., Ghosh, S., Frentrup, M., Hinz, A., & Oliver, R. (2023). Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence. physica status solidi (a), 220(16)
https://doi.org/10.1002/pssa.202200830, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66870
http://dx.doi.org/10.1002/pssa.202200830
Grishchenko, Y., Dawson, J., Ghosh, S., Gundimeda, A., Spiridon, B., Raveendran, N., Oliver, R., Kar-Narayan, S., & Calahorra, Y. (2023). Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity. Journal of Magnetism and Magnetic Materials, 580, 170877
https://doi.org/10.1016/j.jmmm.2023.170877, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66869
http://dx.doi.org/10.1016/j.jmmm.2023.170877
Ghosh, S., Hinz, A., Frentrup, M., Alam, S., Wallis, D., & Oliver, R. (2023). Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD. Semiconductor Science and Technology, 38(4), 044001
https://doi.org/10.1088/1361-6641/acb9b6, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66871
http://dx.doi.org/10.1088/1361-6641/acb9b6

Holl Ymchwil

Erthyglau Cylchgronau

Cannon, J., Bishop, S., Eggleton, K., Yağcı, H., Clark, R., Ibrahim, S., Hadden, J., Ghosh, S., Kappers, M., Oliver, R., & Bennett, A. (2024). Room temperature quantum emitters in aluminum nitride epilayers on silicon. Applied Physics Letters, 124(24)
https://doi.org/10.1063/5.0207744, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66863
http://dx.doi.org/10.1063/5.0207744
Chen, C., Ghosh, S., Wolf, P., Liang, Z., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2024). Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy. Applied Physics Letters, 124(23)
https://doi.org/10.1063/5.0203646, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66864
http://dx.doi.org/10.1063/5.0203646
Sarkar, M., Adams, F., Dar, S., Penn, J., Ji, Y., Gundimeda, A., Zhu, T., Liu, C., Hirshy, H., Massabuau, F., O’Hanlon, T., Kappers, M., Ghosh, S., Kusch, G., & Oliver, R. (2024). Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons. Microscopy and Microanalysis, 30(2), 208-225.
https://doi.org/10.1093/mam/ozae028, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66865
Hinz, A., Ghosh, S., Fairclough, S., Griffiths, J., Kappers, M., Oliver, R., & Wallis, D. (2023). Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures. Journal of Crystal Growth, 624, 127420
https://doi.org/10.1016/j.jcrysgro.2023.127420, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66877
http://dx.doi.org/10.1016/j.jcrysgro.2023.127420
Chen, C., Ghosh, S., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2023). Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. Ultramicroscopy, 254, 113833
https://doi.org/10.1016/j.ultramic.2023.113833, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66866
http://dx.doi.org/10.1016/j.ultramic.2023.113833
Cheng, X., Wessling, N., Ghosh, S., Kirkpatrick, A., Kappers, M., Lekhai, Y., Morley, G., Oliver, R., Smith, J., Dawson, M., Salter, P., & Strain, M. (2023). Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers. ACS Photonics, 10(9), 3374-3383.
https://doi.org/10.1021/acsphotonics.3c00854, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66868
http://dx.doi.org/10.1021/acsphotonics.3c00854
Loeto, K., Kusch, G., Ghosh, S., Kappers, M., & Oliver, R. (2023). Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence. Micron, 172, 103489
https://doi.org/10.1016/j.micron.2023.103489, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66867
http://dx.doi.org/10.1016/j.micron.2023.103489
Loeto, K., Kusch, G., Ghosh, S., Frentrup, M., Hinz, A., & Oliver, R. (2023). Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence. physica status solidi (a), 220(16)
https://doi.org/10.1002/pssa.202200830, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66870
http://dx.doi.org/10.1002/pssa.202200830
Grishchenko, Y., Dawson, J., Ghosh, S., Gundimeda, A., Spiridon, B., Raveendran, N., Oliver, R., Kar-Narayan, S., & Calahorra, Y. (2023). Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity. Journal of Magnetism and Magnetic Materials, 580, 170877
https://doi.org/10.1016/j.jmmm.2023.170877, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66869
http://dx.doi.org/10.1016/j.jmmm.2023.170877
Jiang, N., Ghosh, S., Frentrup, M., Fairclough, S., Loeto, K., Kusch, G., Oliver, R., & Joyce, H. (2023). Complications in silane-assisted GaN nanowire growth. Nanoscale Advances, 5(9), 2610-2620.
https://doi.org/10.1039/d2na00939k, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66872
http://dx.doi.org/10.1039/d2na00939k
Ghosh, S., Hinz, A., Frentrup, M., Alam, S., Wallis, D., & Oliver, R. (2023). Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD. Semiconductor Science and Technology, 38(4), 044001
https://doi.org/10.1088/1361-6641/acb9b6, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66871
http://dx.doi.org/10.1088/1361-6641/acb9b6
Wessling, N., Ghosh, S., Guilhabert, B., Kappers, M., Hinz, A., Toon, M., Oliver, R., Dawson, M., & Strain, M. (2022). Fabrication and transfer printing based integration of free-standing GaN membrane micro-lenses onto semiconductor chips. Optical Materials Express, 12(12), 4606
https://doi.org/10.1364/ome.472999, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66874
http://dx.doi.org/10.1364/ome.472999
Guilhabert, B., Bommer, S., Wessling, N., Jevtics, D., Smith, J., Xia, Z., Ghosh, S., Kappers, M., Watson, I., Oliver, R., Dawson, M., & Strain, M. (2022). Advanced transfer printing with in-situ optical monitoring for the integration of micron-scale devices. IEEE Journal of Selected Topics in Quantum Electronics, 1-12.
https://doi.org/10.1109/jstqe.2022.3227340, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66873
http://dx.doi.org/10.1109/jstqe.2022.3227340
Spiridon, B., Toon, M., Hinz, A., Ghosh, S., Fairclough, S., Guilhabert, B., Strain, M., Watson, I., Dawson, M., Wallis, D., & Oliver, R. (2021). Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis. Optical Materials Express, 11(6), 1643
https://doi.org/10.1364/ome.418728, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66875
http://dx.doi.org/10.1364/ome.418728
Ghosh, S., Hinz, A., Fairclough, S., Spiridon, B., Eblabla, A., Casbon, M., Kappers, M., Elgaid, K., Alam, S., Oliver, R., & Wallis, D. (2021). Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon. ACS Applied Electronic Materials, 3(2), 813-824.
https://doi.org/10.1021/acsaelm.0c00966, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66876
http://dx.doi.org/10.1021/acsaelm.0c00966

Hanes Gyrfa

Darlithydd, Prifysgol Abertawe

Chwefror 2024 - Presennol
Cydymaith Ymchwil, Prifysgol Caergrawnt

Chwefror 2018 - Ionawr 2024

Ymgysylltu Cyhoeddus

Mae gan Dr Saptarsi Ghosh ddiddordeb brwd mewn datblygu gweithgareddau allgymorth i wella'r brwdfrydedd am wyddoniaeth ymhlith y cyhoedd a hyrwyddo peirianneg fel opsiwn gyrfa cyfoethog i fyfyrwyr. Ar hyn o bryd, o dan Dr Mohammad Monfared, mae'n cyfrannu at weithgareddau allgymorth yr adran Peirianneg Electronig a Thrydanol. Ochr yn ochr â Pheirianneg Electronig a Thrydanol, mae'n Llysgennad i Royce Discover Materials (Saptarsi Ghosh - Discover Materials) ac mae'n arddangos mewn gweithdai ar thema Gwyddor Deunyddiau ar lefel genedlaethol.