Dr Saptarsi Ghosh

Darlithydd

Electronic and Electrical Engineering

saptarsi.ghosh@abertawe.ac.uk

324
Trydydd Llawr
Adeilad Gogleddol Peirianneg
Campws y Bae

Ar gael ar gyfer Goruchwyliaeth Ôl-raddedig

Dolenni Ymchwil

https://orcid.org/0000-0003-1685-6228

Google Scholar

Trosolwg

Mae Dr Saptarsi Ghosh yn ddarlithydd yn yr adran Peirianneg Electronig a Thrydanol, ac ymunodd â Phrifysgol Abertawe ar ddechrau 2024. Cyn y swydd ddarlithio hon, roedd yn ymchwilydd ôl-ddoethurol ym Mhrifysgol Caergrawnt a chwblhaodd ei PhD gyda Sefydliad Technoleg India (IIT) Kharagpur.

Mae ei ymchwil bresennol yn ymgyffwrdd â meysydd peirianneg drydanol a ffiseg gymhwysol a chanddi ddau amcan technolegol - i) gwella effeithlonrwydd ynni electroneg pŵer fodern yn sylweddol a ii) gwireddu dyfeisiau ar gyfer cymwysiadau cwantwm 2.0 trawsnewidiol. Er mwyn cyflawni'r rhain, ceir ffocws penodol ar ddyfeisiau dimensiynol isel y teulu galiwm nitrad (GaN) a galiwm ocsid (Ga2O3) o led-ddargludyddion bwlch band llydan. Gydag offer o'r radd flaenaf mewn twf epitacsiol, nodweddu deunyddiau a thrydanol, a lithograffeg, nod ei grŵp yw optimeiddio eu twf ar raddfa fawr, deall rôl pethau nad ydynt yn ddelfrydol (megis diffygion) ar berfformiad dyfeisiau macrosgopig, a chymhwyso egwyddorion ffiseg i beirianneg dyfeisiau.

Mae'n gweithio'n bennaf yn y Ganolfan Deunyddiau Lled-ddargludyddion Integreiddiol (CISM) ar Gampws y Bae, ac mae ei ymchwil yn elwa'n gryf o alluoedd arbrofol y ganolfan hon y buddsoddwyd £50m ynddi, sydd wedi bod ar waith ers 2023. Yn ogystal â'r cysylltiadau cryf yng nghlwstwr lled-ddargludyddion lleol de Cymru, mae ganddo gydweithwyr academaidd gweithredol ledled y DU ac India.

Mae Dr Ghosh wedi bod yn aelod o gymdeithas fyd-eang Sefydliad y Peirianwyr Trydanol ac Electroneg (IEEE) ers 2014 ac ar hyn o bryd mae'n adolygydd cymheiriaid i nifer o gylchgronau lefel uchaf.

Meysydd Arbenigedd

Electroneg bwlch band eang (nitradau ac ocsidau)
Dylunio heterostrwythurau ar gyfer dyfeisiau RF a phŵer
Dibynadwyedd transistorau
Twf lled-ddargludyddion cyfansawdd (MOCVD ac MBE)
Y berthynas rhwng strwythurau a nodweddion ar raddfa nano
Cludiant cwantwm

Uchafbwyntiau Gyrfa

Diddordebau Addysgu

Dyfeisiau electronig cyflwr solet

Cylchedau microelectronig

Nodweddu dyfeisiau a deunyddiau lled-ddargludyddion

Electromagneteg

Cyhoeddiadau

Uchafbwyntiau Ymchwil

Cannon, J., Bishop, S., Eggleton, K., Yağcı, H., Clark, R., Ibrahim, S., Hadden, J., Ghosh, S., Kappers, M., Oliver, R., & Bennett, A. (2024). Room temperature quantum emitters in aluminum nitride epilayers on silicon. Applied Physics Letters, 124(24)
https://doi.org/10.1063/5.0207744, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66863
Chen, C., Ghosh, S., Wolf, P., Liang, Z., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2024). Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy. Applied Physics Letters, 124(23)
https://doi.org/10.1063/5.0203646, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66864
http://dx.doi.org/10.1063/5.0203646
Sarkar, M., Adams, F., Dar, S., Penn, J., Ji, Y., Gundimeda, A., Zhu, T., Liu, C., Hirshy, H., Massabuau, F., O’Hanlon, T., Kappers, M., Ghosh, S., Kusch, G., & Oliver, R. (2024). Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons. Microscopy and Microanalysis, 30(2), 208-225.
https://doi.org/10.1093/mam/ozae028, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66865
Hinz, A., Ghosh, S., Fairclough, S., Griffiths, J., Kappers, M., Oliver, R., & Wallis, D. (2023). Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures. Journal of Crystal Growth, 624, 127420
https://doi.org/10.1016/j.jcrysgro.2023.127420, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66877
Chen, C., Ghosh, S., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2023). Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. Ultramicroscopy, 254, 113833
https://doi.org/10.1016/j.ultramic.2023.113833, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66866
Cheng, X., Wessling, N., Ghosh, S., Kirkpatrick, A., Kappers, M., Lekhai, Y., Morley, G., Oliver, R., Smith, J., Dawson, M., Salter, P., & Strain, M. (2023). Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers. ACS Photonics, 10(9), 3374-3383.
https://doi.org/10.1021/acsphotonics.3c00854, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66868
Loeto, K., Kusch, G., Ghosh, S., Kappers, M., & Oliver, R. (2023). Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence. Micron, 172, 103489
https://doi.org/10.1016/j.micron.2023.103489, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66867
Loeto, K., Kusch, G., Ghosh, S., Frentrup, M., Hinz, A., & Oliver, R. (2023). Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence. physica status solidi (a), 220(16)
https://doi.org/10.1002/pssa.202200830, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66870
Grishchenko, Y., Dawson, J., Ghosh, S., Gundimeda, A., Spiridon, B., Raveendran, N., Oliver, R., Kar-Narayan, S., & Calahorra, Y. (2023). Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity. Journal of Magnetism and Magnetic Materials, 580, 170877
https://doi.org/10.1016/j.jmmm.2023.170877, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66869
Ghosh, S., Hinz, A., Frentrup, M., Alam, S., Wallis, D., & Oliver, R. (2023). Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD. Semiconductor Science and Technology, 38(4), 044001
https://doi.org/10.1088/1361-6641/acb9b6, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66871

Holl Ymchwil

Erthyglau Cylchgronau

Ghosh, S., Sarkar, M., Frentrup, M., Kappers, M., & Oliver, R. (2024). Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates. Journal of Applied Physics, 136(4)
https://doi.org/10.1063/5.0216672, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa67275
Loeto, K., Fairclough, S., Griffiths, I., Kusch, G., Ghosh, S., Kappers, M., Young, N., & Oliver, R. (2024). Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN. Journal of Applied Physics, 136(4)
https://doi.org/10.1063/5.0211529, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa67276
Cannon, J., Bishop, S., Eggleton, K., Yağcı, H., Clark, R., Ibrahim, S., Hadden, J., Ghosh, S., Kappers, M., Oliver, R., & Bennett, A. (2024). Room temperature quantum emitters in aluminum nitride epilayers on silicon. Applied Physics Letters, 124(24)
https://doi.org/10.1063/5.0207744, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66863
Chen, C., Ghosh, S., Wolf, P., Liang, Z., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2024). Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy. Applied Physics Letters, 124(23)
https://doi.org/10.1063/5.0203646, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66864
http://dx.doi.org/10.1063/5.0203646
Sarkar, M., Adams, F., Dar, S., Penn, J., Ji, Y., Gundimeda, A., Zhu, T., Liu, C., Hirshy, H., Massabuau, F., O’Hanlon, T., Kappers, M., Ghosh, S., Kusch, G., & Oliver, R. (2024). Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons. Microscopy and Microanalysis, 30(2), 208-225.
https://doi.org/10.1093/mam/ozae028, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66865
Hinz, A., Ghosh, S., Fairclough, S., Griffiths, J., Kappers, M., Oliver, R., & Wallis, D. (2023). Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures. Journal of Crystal Growth, 624, 127420
https://doi.org/10.1016/j.jcrysgro.2023.127420, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66877
Chen, C., Ghosh, S., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2023). Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. Ultramicroscopy, 254, 113833
https://doi.org/10.1016/j.ultramic.2023.113833, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66866
Loeto, K., Kusch, G., Ghosh, S., Kappers, M., & Oliver, R. (2023). Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence. Micron, 172, 103489
https://doi.org/10.1016/j.micron.2023.103489, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66867
Cheng, X., Wessling, N., Ghosh, S., Kirkpatrick, A., Kappers, M., Lekhai, Y., Morley, G., Oliver, R., Smith, J., Dawson, M., Salter, P., & Strain, M. (2023). Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers. ACS Photonics, 10(9), 3374-3383.
https://doi.org/10.1021/acsphotonics.3c00854, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66868
Grishchenko, Y., Dawson, J., Ghosh, S., Gundimeda, A., Spiridon, B., Raveendran, N., Oliver, R., Kar-Narayan, S., & Calahorra, Y. (2023). Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity. Journal of Magnetism and Magnetic Materials, 580, 170877
https://doi.org/10.1016/j.jmmm.2023.170877, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66869
Loeto, K., Kusch, G., Ghosh, S., Frentrup, M., Hinz, A., & Oliver, R. (2023). Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence. physica status solidi (a), 220(16)
https://doi.org/10.1002/pssa.202200830, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66870
Jiang, N., Ghosh, S., Frentrup, M., Fairclough, S., Loeto, K., Kusch, G., Oliver, R., & Joyce, H. (2023). Complications in silane-assisted GaN nanowire growth. Nanoscale Advances, 5(9), 2610-2620.
https://doi.org/10.1039/d2na00939k, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66872
Ghosh, S., Hinz, A., Frentrup, M., Alam, S., Wallis, D., & Oliver, R. (2023). Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD. Semiconductor Science and Technology, 38(4), 044001
https://doi.org/10.1088/1361-6641/acb9b6, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66871
Guilhabert, B., Bommer, S., Wessling, N., Jevtics, D., Smith, J., Xia, Z., Ghosh, S., Kappers, M., Watson, I., Oliver, R., Dawson, M., & Strain, M. (2022). Advanced transfer printing with in-situ optical monitoring for the integration of micron-scale devices. IEEE Journal of Selected Topics in Quantum Electronics, 29(3), 1-12.
https://doi.org/10.1109/jstqe.2022.3227340, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66873
Wessling, N., Ghosh, S., Guilhabert, B., Kappers, M., Hinz, A., Toon, M., Oliver, R., Dawson, M., & Strain, M. (2022). Fabrication and transfer printing based integration of free-standing GaN membrane micro-lenses onto semiconductor chips. Optical Materials Express, 12(12), 4606
https://doi.org/10.1364/ome.472999, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66874
Spiridon, B., Toon, M., Hinz, A., Ghosh, S., Fairclough, S., Guilhabert, B., Strain, M., Watson, I., Dawson, M., Wallis, D., & Oliver, R. (2021). Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis. Optical Materials Express, 11(6), 1643
https://doi.org/10.1364/ome.418728, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66875
Ghosh, S., Hinz, A., Fairclough, S., Spiridon, B., Eblabla, A., Casbon, M., Kappers, M., Elgaid, K., Alam, S., Oliver, R., & Wallis, D. (2021). Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon. ACS Applied Electronic Materials, 3(2), 813-824.
https://doi.org/10.1021/acsaelm.0c00966, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66876

Modiwlau a Addysgir

EG-240 Electronic Circuits

This module introduces circuit elements such as transistors and FETs and shows how they can be used as amplifiers and switches.The amplification and bias conditions for transistor amplifiers are analysed and discussed in detail. Circuit elements necessary for building operational amplifiers such as the long tailed pair and the current mirror are analysed, and a complete circuit for an operational amplifier is discussed. Some applications of operational amplifiers such as the function generator and instrumentation amplifier are introduced with practical applications. Circuits using MOSFETs for logic and analogue switches are described.
EG-252 Group Design Exercise

The module is intended to reinforce aspects of Engineering Applications (EA1) and develop EA2. Advanced features of microcontroller operation are introduced, including interrupts and programming of features of the selected microcontroller. Extended experimental work is carried out as a Group Design Exercise. Practice in using technical IT packages including microcontroller software development and the use of design aids such as PCBs and engineering drawing is inherent. Development of project documentation through a web-site. Concepts of engineering ethics introduced in first year are developed through a formal lecture, and examined as part of the presentation in the final assessment.
EGA223 Electronic Circuits Laboratory

The laboratory modules EGA223 provides a practical experience of some of the material presented in taught modules, including: EG-240 Electronic Circuits: the bipolar transistor, the long tailed pair and the instrumentation amplifier. EG-247 Signals and Systems: digital encoding and digital filters. Experiments on Amplitude Modulation, Frequency Modulation and Digital Modulation are also included to support the two Communications modules later in the degree programme.

Hanes Gyrfa

Darlithydd, Prifysgol Abertawe

Chwefror 2024 - Presennol
Cydymaith Ymchwil, Prifysgol Caergrawnt

Chwefror 2018 - Ionawr 2024

Ymgysylltu Cyhoeddus

Mae gan Dr Saptarsi Ghosh ddiddordeb brwd mewn datblygu gweithgareddau allgymorth i wella'r brwdfrydedd am wyddoniaeth ymhlith y cyhoedd a hyrwyddo peirianneg fel opsiwn gyrfa cyfoethog i fyfyrwyr. Ar hyn o bryd, o dan Dr Mohammad Monfared, mae'n cyfrannu at weithgareddau allgymorth yr adran Peirianneg Electronig a Thrydanol. Ochr yn ochr â Pheirianneg Electronig a Thrydanol, mae'n Llysgennad i Royce Discover Materials (Saptarsi Ghosh - Discover Materials) ac mae'n arddangos mewn gweithdai ar thema Gwyddor Deunyddiau ar lefel genedlaethol.

Dr Saptarsi Ghosh

Cyfeiriad ebost

LinkedIn Account

Dolenni Ymchwil

Trosolwg

Meysydd Arbenigedd

Uchafbwyntiau Gyrfa

Cyhoeddiadau

Uchafbwyntiau Ymchwil

Holl Ymchwil

Erthyglau Cylchgronau

Modiwlau a Addysgir

EG-240 Electronic Circuits

EG-252 Group Design Exercise

EGA223 Electronic Circuits Laboratory

Hanes Gyrfa

Darlithydd, Prifysgol Abertawe

Cydymaith Ymchwil, Prifysgol Caergrawnt

Ymgysylltu Cyhoeddus