About
Dr Saptarsi Ghosh is a lecturer in the Electronic and Electrical Engineering department, and he joined Swansea University in early 2024. Prior to this lectureship, he was a Postdoctoral researcher at the University of Cambridge and completed his PhD from the Indian Institute of Technology (IIT) Kharagpur.
His current research is at the crossroads of electrical engineering and applied physics with two technological objectives - i) leapfrogging the energy efficiency of modern power electronics and ii) realising devices for transformative quantum 2.0 applications. To achieve these, a particular focus is on low-dimensional devices of the gallium nitride (GaN) and gallium oxide (Ga2O3) family of wide bandgap semiconductors. With state-of-art tools in epitaxial growth, material and electrical characterisation, and lithography, his group aims to optimise their large-scale growth, understand the role of non-idealities (such as defects) on macroscopic device performance, and apply physics-based principles to device engineering.
Primarily based in the Centre of Integrative Semiconductor Materials (CISM) at the Bay campus, his research strongly benefits from the experimental capabilities of this £50 M centre operating since 2023. In addition to the strong connections within the local South Wales semiconductor cluster, he has active academic collaborators distributed in the UK and India.
Dr Ghosh has been a member of the global society of the Institute of Electrical and Electronics Engineers (IEEE) since 2014 and currently serves as a peer-reviewer of several top-tier journals.